Cubic hybrid memory for soon?

A RAM sandwich with a somewhat special cubic sauce. It promises to move quickly, but it is not for immediately.

Recent experiments seem to be completed in IBM HMC, or cubic hybrid RAM. Well, this is in fact not really cubic, but the principle is simple. A layer contains circuits for memory, then stacked on several layers. But the interconnection between these layers, for data storage and access to them, can quickly become limiting, because generally located on the outskirts of these. Intel, in association with Micron, developed tubes between the layers, so lifts to electrons, but this time here in the middle and scattered, shortening exchanges, the speed of access, the performance of transfer and also the power consumption.

On this table, Intel shows that this new memory could achieve a bandwidth of 128 GB/s with a VDD (voltage of memory) on a chip of 512 MB, less than the DDR3. Consumption is also lower if we take the column of the report consumption and bandwidth, but overall, these cells of memory more than DDR3 chips heat. Micron Announces also that these strips of RAM hybrid in 32 nm will be produced in a plant of the State of New York, but it is unlikely to see landing this type of memory in our machines immediately knowing that the world of industry must be hand on before manufacturing process.