Hynix and Toshiba announced that they would collaborate on the development of STT-MRAM and that they would unite in a joint venture for their manufacture. They have also conducted an exchange of patents and spent delivery agreements. As Toshiba clearly said in press release, it is also a way to reduce the risks associated with the placing on the market of a new memory.This announcement comes a week after that Toshiba published interesting research on junctions tunnel perpendicular magnetization which require less power (cf. "Toshiba recovered a STT-MRAM in 3 years"). These structures are at the heart of the briefs STT-MRAM or Spin-Transfer Torque Magnetoresistive Random Access Memory. Spin transfer torque (Spin-Transfer Torque in English) is a phenomenon that takes place when a spin-polarised current (which contains electrons with the same angular movement, Editor's note) passes through the junction magnetic tunnel, a structure consisting of two ferromagnetic elements separated by a thin insulating layer. As shown in the diagram on the left, one of the ferromagnetic layers said trapped by an Antiferromagnetic element. Whatever happens, its polarity will remain unchanged. The other layer is free and when the polarized current through the junction tunnel effect, it will adopt the spin of sent electron, a phenomenon known as Spin-transfer Switching. It will then measure the magnetic strength of the structure. If it is strong, it means that the two ferromagnetic plates have opposite polarities, representing a 0. If it is low, the polarities are identical, which means a 1.Hynix has been working for a long time on this kind of memory and there is no doubt that by joining him, Toshiba will take advantage of technological advances as its partner to develop with Grandis, one of the pioneers in the field of MRAM (cf. "Hynix and Grandis for STT - RAM"). The reconciliation should accelerate developments and bring this technology to market, even if no one speaks still marketing.
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